Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices

Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. Th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2021, Vol.55 (1), p.76-85
Hauptverfasser: Tyschenko, I. E., Zhang, R.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 85
container_issue 1
container_start_page 76
container_title Semiconductors (Woodbury, N.Y.)
container_volume 55
creator Tyschenko, I. E.
Zhang, R.
description Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO 2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.
doi_str_mv 10.1134/S1063782621010188
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2486174495</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2486174495</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-dbb6b7fba2e86d1e2b06093a352b6f908b6936332b08b8617ad7486d5800c0003</originalsourceid><addsrcrecordid>eNp1kE9LAzEQxYMoWKsfwFvA8-ok2c1mj1L8U6i2sHpekt2sTalJTbKH-unNWsGDyBxmmPm9N_AQuiRwTQjLb2oCnJWCckoglRBHaEKggoznZXU8zpxl4_0UnYWwASBEFPkEyTr6oY2Dl1ssbYeXu2hauc1Wa2edxSvvdtpHowN2PZ7bWuFnaV3r9yHKbcD13sa1DuZTd9hYXJtvk9osKX6S0ZtWh3N00idUX_z0KXq9v3uZPWaL5cN8drvIWkZ4zDqluCp7JakWvCOaKuBQMckKqnhfgVC8YpyxtBdKcFLKrswTWQiAFgDYFF0dfHfefQw6xGbjBm_Ty4bmoyDPqyJR5EC13oXgdd_svHmXft8QaMYkmz9JJg09aEJi7Zv2v87_i74A4190IA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2486174495</pqid></control><display><type>article</type><title>Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices</title><source>SpringerLink Journals - AutoHoldings</source><creator>Tyschenko, I. E. ; Zhang, R.</creator><creatorcontrib>Tyschenko, I. E. ; Zhang, R.</creatorcontrib><description>Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO 2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782621010188</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Chemical synthesis ; Composite Semiconductors ; Electrical properties ; Indium antimonide ; Integrated circuits ; Intermetallic compounds ; Ion beams ; Magnetic Materials ; Magnetic properties ; Magnetism ; Magnetron sputtering ; Microcrystalline ; Nanocrystalline ; Nanocrystals ; Optical properties ; Phonons ; Physics ; Physics and Astronomy ; Porous ; Silicon dioxide</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2021, Vol.55 (1), p.76-85</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7826, Semiconductors, 2021, Vol. 55, No. 1, pp. 76–85. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Fizika i Tekhnika Poluprovodnikov, 2021, Vol. 55, No. 1, pp. 59–68.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-dbb6b7fba2e86d1e2b06093a352b6f908b6936332b08b8617ad7486d5800c0003</citedby><cites>FETCH-LOGICAL-c316t-dbb6b7fba2e86d1e2b06093a352b6f908b6936332b08b8617ad7486d5800c0003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782621010188$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782621010188$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Tyschenko, I. E.</creatorcontrib><creatorcontrib>Zhang, R.</creatorcontrib><title>Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO 2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.</description><subject>Chemical synthesis</subject><subject>Composite Semiconductors</subject><subject>Electrical properties</subject><subject>Indium antimonide</subject><subject>Integrated circuits</subject><subject>Intermetallic compounds</subject><subject>Ion beams</subject><subject>Magnetic Materials</subject><subject>Magnetic properties</subject><subject>Magnetism</subject><subject>Magnetron sputtering</subject><subject>Microcrystalline</subject><subject>Nanocrystalline</subject><subject>Nanocrystals</subject><subject>Optical properties</subject><subject>Phonons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Porous</subject><subject>Silicon dioxide</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEQxYMoWKsfwFvA8-ok2c1mj1L8U6i2sHpekt2sTalJTbKH-unNWsGDyBxmmPm9N_AQuiRwTQjLb2oCnJWCckoglRBHaEKggoznZXU8zpxl4_0UnYWwASBEFPkEyTr6oY2Dl1ssbYeXu2hauc1Wa2edxSvvdtpHowN2PZ7bWuFnaV3r9yHKbcD13sa1DuZTd9hYXJtvk9osKX6S0ZtWh3N00idUX_z0KXq9v3uZPWaL5cN8drvIWkZ4zDqluCp7JakWvCOaKuBQMckKqnhfgVC8YpyxtBdKcFLKrswTWQiAFgDYFF0dfHfefQw6xGbjBm_Ty4bmoyDPqyJR5EC13oXgdd_svHmXft8QaMYkmz9JJg09aEJi7Zv2v87_i74A4190IA</recordid><startdate>2021</startdate><enddate>2021</enddate><creator>Tyschenko, I. E.</creator><creator>Zhang, R.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2021</creationdate><title>Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices</title><author>Tyschenko, I. E. ; Zhang, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-dbb6b7fba2e86d1e2b06093a352b6f908b6936332b08b8617ad7486d5800c0003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Chemical synthesis</topic><topic>Composite Semiconductors</topic><topic>Electrical properties</topic><topic>Indium antimonide</topic><topic>Integrated circuits</topic><topic>Intermetallic compounds</topic><topic>Ion beams</topic><topic>Magnetic Materials</topic><topic>Magnetic properties</topic><topic>Magnetism</topic><topic>Magnetron sputtering</topic><topic>Microcrystalline</topic><topic>Nanocrystalline</topic><topic>Nanocrystals</topic><topic>Optical properties</topic><topic>Phonons</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Porous</topic><topic>Silicon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tyschenko, I. E.</creatorcontrib><creatorcontrib>Zhang, R.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tyschenko, I. E.</au><au>Zhang, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2021</date><risdate>2021</risdate><volume>55</volume><issue>1</issue><spage>76</spage><epage>85</epage><pages>76-85</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO 2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782621010188</doi><tpages>10</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1063-7826
ispartof Semiconductors (Woodbury, N.Y.), 2021, Vol.55 (1), p.76-85
issn 1063-7826
1090-6479
language eng
recordid cdi_proquest_journals_2486174495
source SpringerLink Journals - AutoHoldings
subjects Chemical synthesis
Composite Semiconductors
Electrical properties
Indium antimonide
Integrated circuits
Intermetallic compounds
Ion beams
Magnetic Materials
Magnetic properties
Magnetism
Magnetron sputtering
Microcrystalline
Nanocrystalline
Nanocrystals
Optical properties
Phonons
Physics
Physics and Astronomy
Porous
Silicon dioxide
title Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T23%3A58%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20and%20Optical-Phonon%20Properties%20of%20InSb%20Nanocrystals%20Synthesized%20in%20Si%20and%20SiO2%20Matrices&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Tyschenko,%20I.%20E.&rft.date=2021&rft.volume=55&rft.issue=1&rft.spage=76&rft.epage=85&rft.pages=76-85&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782621010188&rft_dat=%3Cproquest_cross%3E2486174495%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2486174495&rft_id=info:pmid/&rfr_iscdi=true