Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices

Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices

Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. Th...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2021, Vol.55 (1), p.76-85
Hauptverfasser: Tyschenko, I. E., Zhang, R.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical synthesis
Composite Semiconductors
Electrical properties
Indium antimonide
Integrated circuits
Intermetallic compounds
Ion beams
Magnetic Materials
Magnetic properties
Magnetism
Magnetron sputtering
Microcrystalline
Nanocrystalline
Nanocrystals
Optical properties
Phonons
Physics
Physics and Astronomy
Porous
Silicon dioxide
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Zusammenfassung:Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO 2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782621010188