Halide Vapor Phase Epitaxy of In2O3 and (In1−xGax)2O3 on Sapphire Substrates and GaN/Al2O3 Templates

The growth of cubic and rhombohedral In2O3 and (InGa)2O3 epitaxial films by halide vapor phase epitaxy (HVPE) is reported. The deposition is carried out at 625 °C using indium trichloride (InCl3), gallium monochloride (GaCl), and O2 precursors on (0001) sapphire substrates, HVPE‐grown Ga2O3/Al2O3 and metal‐organic chemical vapor deposition (MOCVD)‐grown GaN/Al2O3 templates. The HVPE growth of phase pure In2O3 and (InGa)2O3 with corundum structure is reported for the first time. Hydride vapor phase epitaxy (HVPE) of cubic and rhombohedral In2O3 and (InGa)2O3 films on various substrates is investigated. Phase pure rhombohedral In2O3 and (InGa)2O3 films grown by HVPE are reported for the first time. Crystal structure, phase composition, electrical properties, and optical properties of the produced films and structures are studied.