First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding
A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding (ADB) is proposed with the aim of improving the heat transfer. The fabricated PD shows a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2021-02, Vol.218 (3), p.n/a |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Yamada, Yuki Nada, Masahiro Uomoto, Miyuki Shimatsu, Takehito Nakajima, Fumito Matsuzaki, Hideaki |
| description | A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding (ADB) is proposed with the aim of improving the heat transfer. The fabricated PD shows a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate, thanks to the high thermal conductivity of Si used as the collector in the PD.
A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding is proposed with the aim of improving the heat transfer. The fabricated PD exhibits a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate. |
| doi_str_mv | 10.1002/pssa.202000395 |
| format | Article |
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A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding is proposed with the aim of improving the heat transfer. The fabricated PD exhibits a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.202000395</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Atomic structure ; Bonding ; Chemical bonds ; Damage tolerance ; Diffusion rate ; Diffusion welding ; high-power tolerance ; high-speed ; Photodiodes ; Photoelectric effect ; Photoelectric emission ; Substrates ; Thermal conductivity ; wafer bonding</subject><ispartof>Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a</ispartof><rights>2020 Wiley‐VCH GmbH</rights><rights>2021 Wiley‐VCH GmbH</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3175-974108329267bfc872f72290994e3f85c1aab4edca7457de2e3a6c7f3006302d3</citedby><cites>FETCH-LOGICAL-c3175-974108329267bfc872f72290994e3f85c1aab4edca7457de2e3a6c7f3006302d3</cites><orcidid>0000-0002-2603-1951</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.202000395$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.202000395$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Yamada, Yuki</creatorcontrib><creatorcontrib>Nada, Masahiro</creatorcontrib><creatorcontrib>Uomoto, Miyuki</creatorcontrib><creatorcontrib>Shimatsu, Takehito</creatorcontrib><creatorcontrib>Nakajima, Fumito</creatorcontrib><creatorcontrib>Matsuzaki, Hideaki</creatorcontrib><title>First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding</title><title>Physica status solidi. A, Applications and materials science</title><description>A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding (ADB) is proposed with the aim of improving the heat transfer. The fabricated PD shows a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate, thanks to the high thermal conductivity of Si used as the collector in the PD.
A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding is proposed with the aim of improving the heat transfer. The fabricated PD exhibits a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate.</description><subject>Atomic structure</subject><subject>Bonding</subject><subject>Chemical bonds</subject><subject>Damage tolerance</subject><subject>Diffusion rate</subject><subject>Diffusion welding</subject><subject>high-power tolerance</subject><subject>high-speed</subject><subject>Photodiodes</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Substrates</subject><subject>Thermal conductivity</subject><subject>wafer bonding</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqFkM1KAzEUhYMoWKtb1wHXrfmZmUyWY2t_oGBh6nrIZJI2pU3GZErpRnwEn9EncUq1Ll2dy-V893IOAPcY9TFC5LEOQfQJIgghyuML0MFpQnoJxfzyPCN0DW5CWCMUxRHDHfA-Mj40cKi2zobGi8Y4C52GAk7McvX18ZnXSlVQ2Op3MXd75VtduI3ywkoFp3YssvCYGzhfucZVxlUKjkTpjRRNC5cHmDVuayQcGq134fjiydnK2OUtuNJiE9Tdj3bB6-h5MZj0Zi_j6SCb9STFLO5xFmGUUsJJwkotU0Y0I4QjziNFdRpLLEQZqUoKFsWsUkRRkUim27xtZlLRLng43a29e9up0BRrt_O2fVmQKI1pmuKEta7-ySW9C8ErXdTebIU_FBgVx46LY8fFueMW4Cdgbzbq8I-7mOd59sd-Azzlg1k</recordid><startdate>202102</startdate><enddate>202102</enddate><creator>Yamada, Yuki</creator><creator>Nada, Masahiro</creator><creator>Uomoto, Miyuki</creator><creator>Shimatsu, Takehito</creator><creator>Nakajima, Fumito</creator><creator>Matsuzaki, Hideaki</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2603-1951</orcidid></search><sort><creationdate>202102</creationdate><title>First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding</title><author>Yamada, Yuki ; Nada, Masahiro ; Uomoto, Miyuki ; Shimatsu, Takehito ; Nakajima, Fumito ; Matsuzaki, Hideaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3175-974108329267bfc872f72290994e3f85c1aab4edca7457de2e3a6c7f3006302d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Atomic structure</topic><topic>Bonding</topic><topic>Chemical bonds</topic><topic>Damage tolerance</topic><topic>Diffusion rate</topic><topic>Diffusion welding</topic><topic>high-power tolerance</topic><topic>high-speed</topic><topic>Photodiodes</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Substrates</topic><topic>Thermal conductivity</topic><topic>wafer bonding</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yamada, Yuki</creatorcontrib><creatorcontrib>Nada, Masahiro</creatorcontrib><creatorcontrib>Uomoto, Miyuki</creatorcontrib><creatorcontrib>Shimatsu, Takehito</creatorcontrib><creatorcontrib>Nakajima, Fumito</creatorcontrib><creatorcontrib>Matsuzaki, Hideaki</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yamada, Yuki</au><au>Nada, Masahiro</au><au>Uomoto, Miyuki</au><au>Shimatsu, Takehito</au><au>Nakajima, Fumito</au><au>Matsuzaki, Hideaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><date>2021-02</date><risdate>2021</risdate><volume>218</volume><issue>3</issue><epage>n/a</epage><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding (ADB) is proposed with the aim of improving the heat transfer. The fabricated PD shows a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate, thanks to the high thermal conductivity of Si used as the collector in the PD.
A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding is proposed with the aim of improving the heat transfer. The fabricated PD exhibits a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/pssa.202000395</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-2603-1951</orcidid></addata></record> |
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| subjects | Atomic structure Bonding Chemical bonds Damage tolerance Diffusion rate Diffusion welding high-power tolerance high-speed Photodiodes Photoelectric effect Photoelectric emission Substrates Thermal conductivity wafer bonding |
| title | First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding |
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