First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding

A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding (ADB) is proposed with the aim of improving the heat transfer. The fabricated PD shows a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate, thanks to the high thermal conductivity of Si used as the collector in the PD. A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding is proposed with the aim of improving the heat transfer. The fabricated PD exhibits a responsivity of 0.42 A W−1 and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate.