Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06~\mu \text{m} is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and...

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Veröffentlicht in:IEEE access 2021, Vol.9, p.16608-16614
Hauptverfasser: Qiao, Zhongliang, Li, Xiang, Sia, Jia Xubrian, Wang, Wanjun, Wang, Hong, Li, Lin, Li, Zaijin, Zhao, Zhibin, Qu, Yi, Gao, Xin, Bo, Baoxue, Liu, Chongyang
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Sprache:eng
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Zusammenfassung:A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06~\mu \text{m} is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature ( T_{0} ) of the laser and the influences of absorber bias voltage on T_{0} have been systematically investigated. From our findings, T_{0} shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2021.3051179