Study of SOI Field-Effect Hall Sensors in the Partial Depletion Mode

Earlier, when studying with the help of instrument-technological simulation of the silicon-on-insulator field-effect Hall sensor (SOI FEHS) in the partial depletion mode, the effect of increasing its magnetic sensitivity was discovered. In this paper, we study the parameters of SOI-FEHS samples in various operation modes to experimentally confirm the discovered effect. To increase the measurement accuracy in the partial depletion mode, the FEHS design with a split drain is used. The optimal values ​​of the load resistances of the bridge circuit are determined. An analysis of the results of studying the experimental SOI-FEHS samples shows that the peak of the increased magnetic sensitivity is observed in the partial depletion mode. At a load resistance of 1 MΩ and a supply voltage of –9 V, the maximal magnetically induced signal approximately triples in the partial depletion mode compared with the full depletion mode. When recalculating the Δ U voltage difference on the load resistances to the magnetic sensitivity, the specific magnetic sensitivity of the FEHS in the partial depletion mode can reach values ​​of about 10 5 V/(A T), which is significantly higher than that of semiconductor Hall elements.