TCAD based performance assessment of Indium Gallium Nitride based single junction solar cells for different mole fractions of Indium

The tailoring the band gap energy of the ternary Indium Gallium Nitride (In x Ga (1−x) N) alloy shows a good spectral match with a range of wavelength in electromagnetic spectrum and provided a new approach for its utilization in Photovoltaic solar cells. In this paper a 2D numerical simulation of Indium Gallium Nitride (In x Ga 1− x N) single junction solar cell using TCAD has been presented. The device has been simulated and analyzed using physical models such as Auger recombination models using Fermi–Dirac Statistics, Shockley–Read–Hall recombination models and Band Gap Narrowing effect. The J–V and P–V characteristics of the device in dark and illuminated condition were analyzed. The single-junction In 0.72 Ga 0.28 N solar cell shows the maximum efficiency under normalized AM 1.5 G, 0.1 W/cm 2 and at a temperature of 300 K. Further, figure of merits depending on different mole fraction of Indium, like short current density ( J sc ), Open circuit Voltage ( V oc ), fill factor (FF), maximum power generated (P max ) and conversion efficiency of the designed solar cell has been extracted.