Room temperature magnetoelectric properties of [Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3]/Ni0.8Zn0.2Fe2O4 bilayer thin films deposited by laser ablation

Ferroelectric-ferromagnetic [Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3](160 nm)/Ni0.8Zn0.2Fe2O4 (30 nm, 60 nm) bilayer thin films (abbreviated as (BZT-0.5BCT)/NZFO) have been grown on Pt/Si(100) substrate by pulse laser deposition techniques. X-ray diffraction analysis confirms polycrystalline nature of the films without any intermediate phase at the interface. The large value of dielectric constant (ε΄ ~ 2.03 × 103 at frequency 100 Hz) and remnant magnetization (Mr ~ 45.25 emu/cc) were observed at room temperature for (BZT-0.5BCT)/NZFO (60 nm) bilayer thin film. Bilayer (BZT-0.5BCT)/NZFO (30 nm) thin film exhibits saturated ferroelectric loop with large value of polarizations Pr ~ 5.57 μC/cm2 and Ps ~ 20 μC/cm2. The large value of ME coefficient (αE ~ 320 mV/cm.Oe) was obtained for (BZT-0.5BCT)/NZFO (30 nm) thin film at room temperature. This indicates its potential for lead-free ME device applications. •Lead-free (BZT-0.5BCT) (160 nm)/NZFO(60 nm, 30 nm) bilayer thin films have been grown successfully on Pt/Si(100) substrate.•Large polarizations (Pr ~ 5.57 μC/cm2, Ps ~ 20 μC/cm2) are observed for (BZT-0.5BCT)/NZFO (30 nm) film at room temperature.•Bilayer (BZT-0.5BCT)/NZFO (60 nm) film exhibits large value of dielectric constant ε΄~2.03 × 103 at frequency 100 Hz.•Strong ME coupling coefficient (αE ~320 mV/Oe.cm) is observed at room temperature for (BZT-0.5BCT)/NZFO (30 nm) film.