The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures

A maskless approach of forming p‐doped regions in Si wafers using the Ga source of a standard focused ion beam (FIB) system and the moderate activation temperatures of 400–700 °C is demonstrated in this work. This simple and flexible route is accessible to many research labs and is successfully used to fabricate Si‐based diodes and field‐effect transistors (FETs). For the diodes, tunneling is found to be the forward current transport mechanism. The fabricated p‐FET structures show excellent switching behavior with a high ID,ON/ID,OFF current ratio of 5 × 106. The gallium source of a standard focused ion beam (FIB) system is used to form p‐doped regions in Si wafers. The moderate activation temperatures of 400–700 °C are demonstrated for the fabrication of diodes and p‐field‐effect transistors (FETs). Tunneling is the forward transport mechanism for the diodes, and the p‐FETs show an excellent switching behavior.