Realization of C-60 whiskers incorporated chalcopyrite CuInxGa1-xSe2 in Cu2Se/C-60/In3Se2/C-60/Ga2Se3 multilayer structures
[Display omitted] •A novel carbonaceous (fullerene C 60) incorporated Chalcopyrite CIGS thin film structure was fabricated.•C 60 whisker implanted chalcogenide grain surface is observed.•A preferred (112) plane orientation of chalcopyrite CIGS is achieved through post annealing at 350 °C. The curren...
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| Veröffentlicht in: | Materials letters 2021-01, Vol.282, p.128692, Article 128692 |
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| container_start_page | 128692 |
| container_title | Materials letters |
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| creator | Nelson, P. Issac Mohan, A. Kannan, R. Rathes Vidhya, B. Rajesh, S. |
| description | [Display omitted]
•A novel carbonaceous (fullerene C 60) incorporated Chalcopyrite CIGS thin film structure was fabricated.•C 60 whisker implanted chalcogenide grain surface is observed.•A preferred (112) plane orientation of chalcopyrite CIGS is achieved through post annealing at 350 °C.
The current article is focused on developing a new class of chalcogenide absorber layer. A multiple stacking of metal selenides with C-60 as an intermatrix layer is fabricated on a glass substrate. Post-annealing of sequential temperatures from 150 °C to 350 °C is applied to the multilayer thin film structure. X-ray diffraction revealed a dominant CIGS chalcopyrite structure with a preferential (112) plane orientation upon maximal annealing temperature. Morphological analysis has displayed fullerene whiskers imposed in spherical grains background surface. Films have displayed an appreciable absorption coefficient (≥105 cm−1). Tauc plots revealed a near-optimal single direct band gap transition at 1.64 eV for annealed (350 °C) film. |
| doi_str_mv | 10.1016/j.matlet.2020.128692 |
| format | Article |
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•A novel carbonaceous (fullerene C 60) incorporated Chalcopyrite CIGS thin film structure was fabricated.•C 60 whisker implanted chalcogenide grain surface is observed.•A preferred (112) plane orientation of chalcopyrite CIGS is achieved through post annealing at 350 °C.
The current article is focused on developing a new class of chalcogenide absorber layer. A multiple stacking of metal selenides with C-60 as an intermatrix layer is fabricated on a glass substrate. Post-annealing of sequential temperatures from 150 °C to 350 °C is applied to the multilayer thin film structure. X-ray diffraction revealed a dominant CIGS chalcopyrite structure with a preferential (112) plane orientation upon maximal annealing temperature. Morphological analysis has displayed fullerene whiskers imposed in spherical grains background surface. Films have displayed an appreciable absorption coefficient (≥105 cm−1). Tauc plots revealed a near-optimal single direct band gap transition at 1.64 eV for annealed (350 °C) film.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2020.128692</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Absorptivity ; Annealing ; C60 ; Chalcopyrite ; CIGS ; Copper selenides ; Fullerene ; Fullerenes ; Gallium triselenide ; Glass substrates ; Materials science ; Multilayers ; Photovoltaic cells ; Physical vapour deposition ; Selenides ; Thin films ; Whiskers</subject><ispartof>Materials letters, 2021-01, Vol.282, p.128692, Article 128692</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jan 1, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c334t-c3a15f9e7fc570063b7241e7f00d7bf017049530111c39bc3013eccdb44011123</citedby><cites>FETCH-LOGICAL-c334t-c3a15f9e7fc570063b7241e7f00d7bf017049530111c39bc3013eccdb44011123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.matlet.2020.128692$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids></links><search><creatorcontrib>Nelson, P. Issac</creatorcontrib><creatorcontrib>Mohan, A.</creatorcontrib><creatorcontrib>Kannan, R. Rathes</creatorcontrib><creatorcontrib>Vidhya, B.</creatorcontrib><creatorcontrib>Rajesh, S.</creatorcontrib><title>Realization of C-60 whiskers incorporated chalcopyrite CuInxGa1-xSe2 in Cu2Se/C-60/In3Se2/C-60/Ga2Se3 multilayer structures</title><title>Materials letters</title><description>[Display omitted]
•A novel carbonaceous (fullerene C 60) incorporated Chalcopyrite CIGS thin film structure was fabricated.•C 60 whisker implanted chalcogenide grain surface is observed.•A preferred (112) plane orientation of chalcopyrite CIGS is achieved through post annealing at 350 °C.
The current article is focused on developing a new class of chalcogenide absorber layer. A multiple stacking of metal selenides with C-60 as an intermatrix layer is fabricated on a glass substrate. Post-annealing of sequential temperatures from 150 °C to 350 °C is applied to the multilayer thin film structure. X-ray diffraction revealed a dominant CIGS chalcopyrite structure with a preferential (112) plane orientation upon maximal annealing temperature. Morphological analysis has displayed fullerene whiskers imposed in spherical grains background surface. Films have displayed an appreciable absorption coefficient (≥105 cm−1). Tauc plots revealed a near-optimal single direct band gap transition at 1.64 eV for annealed (350 °C) film.</description><subject>Absorptivity</subject><subject>Annealing</subject><subject>C60</subject><subject>Chalcopyrite</subject><subject>CIGS</subject><subject>Copper selenides</subject><subject>Fullerene</subject><subject>Fullerenes</subject><subject>Gallium triselenide</subject><subject>Glass substrates</subject><subject>Materials science</subject><subject>Multilayers</subject><subject>Photovoltaic cells</subject><subject>Physical vapour deposition</subject><subject>Selenides</subject><subject>Thin films</subject><subject>Whiskers</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kF9LwzAUxYMoOKffwIeCz93yr836IsjQORgITsG3kKa3LLVrZpLqpl_ejPrsy703P8654R6ErgmeEEzyaTPZqtBCmFBMI6KzvKAnaERmgqW8EMUpGkWZSDMh3s7RhfcNxpgXmI_QzzOo1nyrYGyX2DqZpzlOvjbGv4Pziem0dTvrVIAq0RvVars7OBMgmffLbr9QJN2vgUZdBHQN06N9uuxYhMO8UBGzZNu3wbTqAC7xwfU69A78JTqrVevh6q-P0evD_cv8MV09LZbzu1WqGeMhVkWyugBR60xgnLNSUE7iE-NKlDUmIt6SMUwI0awodZwYaF2VnB8ZZWN0M-zdOfvRgw-ysb3r4peScjGjmShyFlV8UGlnvXdQy50zW-UOkmB5jFk2cohZHmOWQ8zRdjvYIF7wacBJrw10GirjQAdZWfP_gl_W0YVo</recordid><startdate>20210101</startdate><enddate>20210101</enddate><creator>Nelson, P. Issac</creator><creator>Mohan, A.</creator><creator>Kannan, R. Rathes</creator><creator>Vidhya, B.</creator><creator>Rajesh, S.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20210101</creationdate><title>Realization of C-60 whiskers incorporated chalcopyrite CuInxGa1-xSe2 in Cu2Se/C-60/In3Se2/C-60/Ga2Se3 multilayer structures</title><author>Nelson, P. Issac ; Mohan, A. ; Kannan, R. Rathes ; Vidhya, B. ; Rajesh, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-c3a15f9e7fc570063b7241e7f00d7bf017049530111c39bc3013eccdb44011123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Absorptivity</topic><topic>Annealing</topic><topic>C60</topic><topic>Chalcopyrite</topic><topic>CIGS</topic><topic>Copper selenides</topic><topic>Fullerene</topic><topic>Fullerenes</topic><topic>Gallium triselenide</topic><topic>Glass substrates</topic><topic>Materials science</topic><topic>Multilayers</topic><topic>Photovoltaic cells</topic><topic>Physical vapour deposition</topic><topic>Selenides</topic><topic>Thin films</topic><topic>Whiskers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nelson, P. Issac</creatorcontrib><creatorcontrib>Mohan, A.</creatorcontrib><creatorcontrib>Kannan, R. Rathes</creatorcontrib><creatorcontrib>Vidhya, B.</creatorcontrib><creatorcontrib>Rajesh, S.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nelson, P. Issac</au><au>Mohan, A.</au><au>Kannan, R. Rathes</au><au>Vidhya, B.</au><au>Rajesh, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Realization of C-60 whiskers incorporated chalcopyrite CuInxGa1-xSe2 in Cu2Se/C-60/In3Se2/C-60/Ga2Se3 multilayer structures</atitle><jtitle>Materials letters</jtitle><date>2021-01-01</date><risdate>2021</risdate><volume>282</volume><spage>128692</spage><pages>128692-</pages><artnum>128692</artnum><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>[Display omitted]
•A novel carbonaceous (fullerene C 60) incorporated Chalcopyrite CIGS thin film structure was fabricated.•C 60 whisker implanted chalcogenide grain surface is observed.•A preferred (112) plane orientation of chalcopyrite CIGS is achieved through post annealing at 350 °C.
The current article is focused on developing a new class of chalcogenide absorber layer. A multiple stacking of metal selenides with C-60 as an intermatrix layer is fabricated on a glass substrate. Post-annealing of sequential temperatures from 150 °C to 350 °C is applied to the multilayer thin film structure. X-ray diffraction revealed a dominant CIGS chalcopyrite structure with a preferential (112) plane orientation upon maximal annealing temperature. Morphological analysis has displayed fullerene whiskers imposed in spherical grains background surface. Films have displayed an appreciable absorption coefficient (≥105 cm−1). Tauc plots revealed a near-optimal single direct band gap transition at 1.64 eV for annealed (350 °C) film.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2020.128692</doi></addata></record> |
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| ispartof | Materials letters, 2021-01, Vol.282, p.128692, Article 128692 |
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| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Absorptivity Annealing C60 Chalcopyrite CIGS Copper selenides Fullerene Fullerenes Gallium triselenide Glass substrates Materials science Multilayers Photovoltaic cells Physical vapour deposition Selenides Thin films Whiskers |
| title | Realization of C-60 whiskers incorporated chalcopyrite CuInxGa1-xSe2 in Cu2Se/C-60/In3Se2/C-60/Ga2Se3 multilayer structures |
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