Realization of C-60 whiskers incorporated chalcopyrite CuInxGa1-xSe2 in Cu2Se/C-60/In3Se2/C-60/Ga2Se3 multilayer structures

[Display omitted] •A novel carbonaceous (fullerene C 60) incorporated Chalcopyrite CIGS thin film structure was fabricated.•C 60 whisker implanted chalcogenide grain surface is observed.•A preferred (112) plane orientation of chalcopyrite CIGS is achieved through post annealing at 350 °C. The current article is focused on developing a new class of chalcogenide absorber layer. A multiple stacking of metal selenides with C-60 as an intermatrix layer is fabricated on a glass substrate. Post-annealing of sequential temperatures from 150 °C to 350 °C is applied to the multilayer thin film structure. X-ray diffraction revealed a dominant CIGS chalcopyrite structure with a preferential (112) plane orientation upon maximal annealing temperature. Morphological analysis has displayed fullerene whiskers imposed in spherical grains background surface. Films have displayed an appreciable absorption coefficient (≥105 cm−1). Tauc plots revealed a near-optimal single direct band gap transition at 1.64 eV for annealed (350 °C) film.