Resonant Activation of Resistive Switching in ZrO2(Y) Based Memristors

We report on a comparative study of resistive switching in the memristors based on ZrO 2 (Y) films and on ZrO 2 (Y)/Ta 2 O 5 bilayer stacks by triangle voltage pulses with superimposed high-frequency sinusoidal signal. The dependencies of the current difference in the low resistance state and in the high resistance one on the sinusoidal signal frequency for the ZrO 2 (Y)-based memristor and for the ZrO 2 (Y)/Ta 2 O 5 -stack based one manifested one and two maxima, respectively attributed to the resonant activation of the migration of the oxygen ions via the oxygen vacancies by the alternating external electric field in ZrO 2 (Y) and in Ta 2 O 5 .