Formation of Double Steps on Si (100): Effect of Permeability of the A-Steps
A model of the elementary step motion on a two-domain (100) silicon surface during crystallization from a molecular beam is proposed. The model takes into account the possibility of an adatom transition to an adjacent terrace before incorporation into a kink at the A-step edge (the effect of the A-s...
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Veröffentlicht in: | Russian physics journal 2020-10, Vol.63 (6), p.901-906 |
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description | A model of the elementary step motion on a two-domain (100) silicon surface during crystallization from a molecular beam is proposed. The model takes into account the possibility of an adatom transition to an adjacent terrace before incorporation into a kink at the A-step edge (the effect of the A-step permeability). It is shown that the permeability of the A-step contributes to the faster pairing of the A- and B-steps and, consequently, transition to a single-domain surface. For the fast pairing of the steps, it is sufficient only the presence of an inverse Ehrlich–Schwoebel barrier for the attachment of adatoms to the A-step from the B-type terrace. A conventional barrier (for the attachment from the A-type terrace) may be absent, which is consistent with the results of quantum chemical calculations. |
doi_str_mv | 10.1007/s11182-020-02116-1 |
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A conventional barrier (for the attachment from the A-type terrace) may be absent, which is consistent with the results of quantum chemical calculations.</description><subject>Adatoms</subject><subject>Analysis</subject><subject>Condensed Matter Physics</subject><subject>Crystallization</subject><subject>Domains</subject><subject>Hadrons</subject><subject>Heavy Ions</subject><subject>Lasers</subject><subject>Mathematical and Computational Physics</subject><subject>Molecular beams</subject><subject>Nuclear Physics</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Permeability</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductors and Dielectrics</subject><subject>Quantum chemistry</subject><subject>Silicon</subject><subject>Theoretical</subject><issn>1064-8887</issn><issn>1573-9228</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEUhgdRsFZfwNWAG12k5jK51F2prQoFheo6TCcndcrMpCbpom9vxhHcSQhJDv-Xc_iy7JrgCcFY3gdCiKIIU5w2IQKRk2xEuGRoSqk6TXcsCqSUkufZRQg7jBMm5ChbLZ1vy1i7Lnc2f3SHTQP5OsI-5Km0rvPbFLx7yBfWQhX7zBv4FspN3dTx2L_jJ-Qz9INcZme2bAJc_Z7j7GO5eJ8_o9Xr08t8tkIV4yoiWRhCrWJEYGkx2I3FXFViykVJKwtAleLGKKYAU2W4wYYURHFlGBYcG8bG2c3w7967rwOEqHfu4LvUUtNCMqnEVPSpyZDalg3ourMu-rJKy0BbV64DW6f6TBSMsSRJJoAOQOVdCB6s3vu6Lf1RE6x7zXrQrJNm_aNZkwSxAQop3G3B_83yD_UNYfN71w</recordid><startdate>20201001</startdate><enddate>20201001</enddate><creator>Hervieu, Yu. 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Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-74d12f831607f0efbf058c6956a2cfee2885dd838e028d5d0d141858d30650d33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Adatoms</topic><topic>Analysis</topic><topic>Condensed Matter Physics</topic><topic>Crystallization</topic><topic>Domains</topic><topic>Hadrons</topic><topic>Heavy Ions</topic><topic>Lasers</topic><topic>Mathematical and Computational Physics</topic><topic>Molecular beams</topic><topic>Nuclear Physics</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Permeability</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductors and Dielectrics</topic><topic>Quantum chemistry</topic><topic>Silicon</topic><topic>Theoretical</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hervieu, Yu. Yu</creatorcontrib><collection>CrossRef</collection><jtitle>Russian physics journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hervieu, Yu. Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation of Double Steps on Si (100): Effect of Permeability of the A-Steps</atitle><jtitle>Russian physics journal</jtitle><stitle>Russ Phys J</stitle><date>2020-10-01</date><risdate>2020</risdate><volume>63</volume><issue>6</issue><spage>901</spage><epage>906</epage><pages>901-906</pages><issn>1064-8887</issn><eissn>1573-9228</eissn><abstract>A model of the elementary step motion on a two-domain (100) silicon surface during crystallization from a molecular beam is proposed. The model takes into account the possibility of an adatom transition to an adjacent terrace before incorporation into a kink at the A-step edge (the effect of the A-step permeability). It is shown that the permeability of the A-step contributes to the faster pairing of the A- and B-steps and, consequently, transition to a single-domain surface. For the fast pairing of the steps, it is sufficient only the presence of an inverse Ehrlich–Schwoebel barrier for the attachment of adatoms to the A-step from the B-type terrace. A conventional barrier (for the attachment from the A-type terrace) may be absent, which is consistent with the results of quantum chemical calculations.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11182-020-02116-1</doi><tpages>6</tpages></addata></record> |
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subjects | Adatoms Analysis Condensed Matter Physics Crystallization Domains Hadrons Heavy Ions Lasers Mathematical and Computational Physics Molecular beams Nuclear Physics Optical Devices Optics Permeability Photonics Physics Physics and Astronomy Physics of Semiconductors and Dielectrics Quantum chemistry Silicon Theoretical |
title | Formation of Double Steps on Si (100): Effect of Permeability of the A-Steps |
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