Ultralow Dielectric Constant and High Temperature Resistance Composites Based on Self-Crosslinking Polysulfone and Hollow Glass Beads

In this work, ultralow dielectric constant (ultralow- k ) polysulfone (PSF) composites were prepared by adding hollow glass beads (HGB) modified with 1,3-divinyltetramethyldisiloxane (DVTM). The results indicated that the surface modification of HGB (m-HGB) effectively enhanced the interfacial compa...

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Veröffentlicht in:Journal of electronic materials 2020-12, Vol.49 (12), p.7581-7588
Hauptverfasser: Zhong, Jiachun, Zheng, Xiaoyi, He, Gang, Xia, Jialing, Pu, Zejun
Format: Artikel
Sprache:eng
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Zusammenfassung:In this work, ultralow dielectric constant (ultralow- k ) polysulfone (PSF) composites were prepared by adding hollow glass beads (HGB) modified with 1,3-divinyltetramethyldisiloxane (DVTM). The results indicated that the surface modification of HGB (m-HGB) effectively enhanced the interfacial compatibility between the inorganic fillers and PSF matrix. DSC and TGA measurements of the composite films were performed under a nitrogen atmosphere, and the results showed that the composite films possess high glass transition temperatures varying from 187 °C to 190 °C, and are thermally stable␣up to 445 °C. The mechanical properties of composite films with modified HGB fillers show a certain drop, but the values were still higher than 32 MPa. Furthermore, the obtained composite films show low dielectric constant, low dielectric loss, good permittivity-frequency stability and dielectric-temperature stability under 190 °C. Therefore, we shown an effective path to prepare composites with ultralow dielectric constant for use in high temperature resistant ultra large scale integration (ULSI) flexible insulation substrate field.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-020-08491-2