Ultralow Dielectric Constant and High Temperature Resistance Composites Based on Self-Crosslinking Polysulfone and Hollow Glass Beads
In this work, ultralow dielectric constant (ultralow- k ) polysulfone (PSF) composites were prepared by adding hollow glass beads (HGB) modified with 1,3-divinyltetramethyldisiloxane (DVTM). The results indicated that the surface modification of HGB (m-HGB) effectively enhanced the interfacial compa...
Gespeichert in:
Veröffentlicht in: | Journal of electronic materials 2020-12, Vol.49 (12), p.7581-7588 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In this work, ultralow dielectric constant (ultralow-
k
) polysulfone (PSF) composites were prepared by adding hollow glass beads (HGB) modified with 1,3-divinyltetramethyldisiloxane (DVTM). The results indicated that the surface modification of HGB (m-HGB) effectively enhanced the interfacial compatibility between the inorganic fillers and PSF matrix. DSC and TGA measurements of the composite films were performed under a nitrogen atmosphere, and the results showed that the composite films possess high glass transition temperatures varying from 187 °C to 190 °C, and are thermally stable␣up to 445 °C. The mechanical properties of composite films with modified HGB fillers show a certain drop, but the values were still higher than 32 MPa. Furthermore, the obtained composite films show low dielectric constant, low dielectric loss, good permittivity-frequency stability and dielectric-temperature stability under 190 °C. Therefore, we shown an effective path to prepare composites with ultralow dielectric constant for use in high temperature resistant ultra large scale integration (ULSI) flexible insulation substrate field. |
---|---|
ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-020-08491-2 |