Design, construction and performance of P-N junction diode prepared with FeTiO2 thin films
[Display omitted] •Design and construction of n-FeTiO2/p-Si diode.•Higher order crystallinity with orthorhombic structure.•Tuned Optical band gap of 3.11 eV.•Diode characteristics with barrier height (Φb) value of 0.43 eV in dark and 0.65 eV under light. FeTiO2 thin films are prepared by sol–gel dip...
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| Veröffentlicht in: | Materials letters 2020-12, Vol.281, p.128604, Article 128604 |
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| creator | Rajeswari, R. Venugopal, D. George, Amal Dhayal Raj, A. |
| description | [Display omitted]
•Design and construction of n-FeTiO2/p-Si diode.•Higher order crystallinity with orthorhombic structure.•Tuned Optical band gap of 3.11 eV.•Diode characteristics with barrier height (Φb) value of 0.43 eV in dark and 0.65 eV under light.
FeTiO2 thin films are prepared by sol–gel dip coating technique at room temperature. The X-ray Diffraction (XRD) analysis confirms the good crystalline nature of the prepared thin films and the UV–Vis Spectroscopic results revealed an optical band gap value around 3.11 eV. The electrical property from I-V represented an increase in electric field with corresponding increase in current density. The prepared thin films are used in the construction of P-N junction diode. The design and construction of the P-N junction diode has been elaborated here. The diode performance has been studied through the voltage Vs current characteristic graphs. The diode parameters of ideality factor (n) and barrier height (Φb) of n-FeTiO2/p-Si is calculated from the I-V measurements in darkness and under the illumination using J-V method. The value of ideality factor n for n-FeTiO2/p-Si diode is 6.88 in dark but under light, it increases to 7.51. |
| doi_str_mv | 10.1016/j.matlet.2020.128604 |
| format | Article |
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•Design and construction of n-FeTiO2/p-Si diode.•Higher order crystallinity with orthorhombic structure.•Tuned Optical band gap of 3.11 eV.•Diode characteristics with barrier height (Φb) value of 0.43 eV in dark and 0.65 eV under light.
FeTiO2 thin films are prepared by sol–gel dip coating technique at room temperature. The X-ray Diffraction (XRD) analysis confirms the good crystalline nature of the prepared thin films and the UV–Vis Spectroscopic results revealed an optical band gap value around 3.11 eV. The electrical property from I-V represented an increase in electric field with corresponding increase in current density. The prepared thin films are used in the construction of P-N junction diode. The design and construction of the P-N junction diode has been elaborated here. The diode performance has been studied through the voltage Vs current characteristic graphs. The diode parameters of ideality factor (n) and barrier height (Φb) of n-FeTiO2/p-Si is calculated from the I-V measurements in darkness and under the illumination using J-V method. The value of ideality factor n for n-FeTiO2/p-Si diode is 6.88 in dark but under light, it increases to 7.51.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2020.128604</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Current voltage characteristics ; Darkness ; Dip-coating ; Electric fields ; Fe doped TiO2 ; I-V characteristics ; Immersion coating ; Junction diodes ; Materials science ; Optical properties ; P-N junction diode ; P-n junctions ; Room temperature ; Sol-gel processes ; Thin films</subject><ispartof>Materials letters, 2020-12, Vol.281, p.128604, Article 128604</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Dec 15, 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c334t-50519c35636279e024031f5de2e15f922ddf7219d6153d46d22a551176ead8f23</citedby><cites>FETCH-LOGICAL-c334t-50519c35636279e024031f5de2e15f922ddf7219d6153d46d22a551176ead8f23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167577X20313112$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27903,27904,65309</link.rule.ids></links><search><creatorcontrib>Rajeswari, R.</creatorcontrib><creatorcontrib>Venugopal, D.</creatorcontrib><creatorcontrib>George, Amal</creatorcontrib><creatorcontrib>Dhayal Raj, A.</creatorcontrib><title>Design, construction and performance of P-N junction diode prepared with FeTiO2 thin films</title><title>Materials letters</title><description>[Display omitted]
•Design and construction of n-FeTiO2/p-Si diode.•Higher order crystallinity with orthorhombic structure.•Tuned Optical band gap of 3.11 eV.•Diode characteristics with barrier height (Φb) value of 0.43 eV in dark and 0.65 eV under light.
FeTiO2 thin films are prepared by sol–gel dip coating technique at room temperature. The X-ray Diffraction (XRD) analysis confirms the good crystalline nature of the prepared thin films and the UV–Vis Spectroscopic results revealed an optical band gap value around 3.11 eV. The electrical property from I-V represented an increase in electric field with corresponding increase in current density. The prepared thin films are used in the construction of P-N junction diode. The design and construction of the P-N junction diode has been elaborated here. The diode performance has been studied through the voltage Vs current characteristic graphs. The diode parameters of ideality factor (n) and barrier height (Φb) of n-FeTiO2/p-Si is calculated from the I-V measurements in darkness and under the illumination using J-V method. The value of ideality factor n for n-FeTiO2/p-Si diode is 6.88 in dark but under light, it increases to 7.51.</description><subject>Current voltage characteristics</subject><subject>Darkness</subject><subject>Dip-coating</subject><subject>Electric fields</subject><subject>Fe doped TiO2</subject><subject>I-V characteristics</subject><subject>Immersion coating</subject><subject>Junction diodes</subject><subject>Materials science</subject><subject>Optical properties</subject><subject>P-N junction diode</subject><subject>P-n junctions</subject><subject>Room temperature</subject><subject>Sol-gel processes</subject><subject>Thin films</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLAzEQhYMoWKv_wEPAq1uTbJJtLoKoVaFYDxXES1iSic3SbtYkq_jv3bKevczAzHtvmA-hc0pmlFB51cx2dd5CnjHChhGbS8IP0ITOq7LgqlKHaDLIqkJU1dsxOkmpIYRwRfgEvd9B8h_tJTahTTn2JvvQ4rq1uIPoQtzVrQEcHH4pnnHTt-Pe-mABdxG6OoLF3z5v8ALWfsVw3vgWO7_dpVN05OptgrO_PkWvi_v17WOxXD083d4sC1OWPBeCCKpMKWQpWaWAME5K6oQFBlQ4xZi1rmJUWUlFabm0jNVCUFpJqO3csXKKLsbcLobPHlLWTehjO5zUjEtF1VDpoOKjysSQUgSnu-h3dfzRlOg9Rd3okaLeU9QjxcF2Pdpg-ODLQ9TJeBiYWB_BZG2D_z_gFyihe14</recordid><startdate>20201215</startdate><enddate>20201215</enddate><creator>Rajeswari, R.</creator><creator>Venugopal, D.</creator><creator>George, Amal</creator><creator>Dhayal Raj, A.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20201215</creationdate><title>Design, construction and performance of P-N junction diode prepared with FeTiO2 thin films</title><author>Rajeswari, R. ; Venugopal, D. ; George, Amal ; Dhayal Raj, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-50519c35636279e024031f5de2e15f922ddf7219d6153d46d22a551176ead8f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Current voltage characteristics</topic><topic>Darkness</topic><topic>Dip-coating</topic><topic>Electric fields</topic><topic>Fe doped TiO2</topic><topic>I-V characteristics</topic><topic>Immersion coating</topic><topic>Junction diodes</topic><topic>Materials science</topic><topic>Optical properties</topic><topic>P-N junction diode</topic><topic>P-n junctions</topic><topic>Room temperature</topic><topic>Sol-gel processes</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rajeswari, R.</creatorcontrib><creatorcontrib>Venugopal, D.</creatorcontrib><creatorcontrib>George, Amal</creatorcontrib><creatorcontrib>Dhayal Raj, A.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rajeswari, R.</au><au>Venugopal, D.</au><au>George, Amal</au><au>Dhayal Raj, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design, construction and performance of P-N junction diode prepared with FeTiO2 thin films</atitle><jtitle>Materials letters</jtitle><date>2020-12-15</date><risdate>2020</risdate><volume>281</volume><spage>128604</spage><pages>128604-</pages><artnum>128604</artnum><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>[Display omitted]
•Design and construction of n-FeTiO2/p-Si diode.•Higher order crystallinity with orthorhombic structure.•Tuned Optical band gap of 3.11 eV.•Diode characteristics with barrier height (Φb) value of 0.43 eV in dark and 0.65 eV under light.
FeTiO2 thin films are prepared by sol–gel dip coating technique at room temperature. The X-ray Diffraction (XRD) analysis confirms the good crystalline nature of the prepared thin films and the UV–Vis Spectroscopic results revealed an optical band gap value around 3.11 eV. The electrical property from I-V represented an increase in electric field with corresponding increase in current density. The prepared thin films are used in the construction of P-N junction diode. The design and construction of the P-N junction diode has been elaborated here. The diode performance has been studied through the voltage Vs current characteristic graphs. The diode parameters of ideality factor (n) and barrier height (Φb) of n-FeTiO2/p-Si is calculated from the I-V measurements in darkness and under the illumination using J-V method. The value of ideality factor n for n-FeTiO2/p-Si diode is 6.88 in dark but under light, it increases to 7.51.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2020.128604</doi></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Current voltage characteristics Darkness Dip-coating Electric fields Fe doped TiO2 I-V characteristics Immersion coating Junction diodes Materials science Optical properties P-N junction diode P-n junctions Room temperature Sol-gel processes Thin films |
| title | Design, construction and performance of P-N junction diode prepared with FeTiO2 thin films |
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