Design, construction and performance of P-N junction diode prepared with FeTiO2 thin films

[Display omitted] •Design and construction of n-FeTiO2/p-Si diode.•Higher order crystallinity with orthorhombic structure.•Tuned Optical band gap of 3.11 eV.•Diode characteristics with barrier height (Φb) value of 0.43 eV in dark and 0.65 eV under light. FeTiO2 thin films are prepared by sol–gel dip coating technique at room temperature. The X-ray Diffraction (XRD) analysis confirms the good crystalline nature of the prepared thin films and the UV–Vis Spectroscopic results revealed an optical band gap value around 3.11 eV. The electrical property from I-V represented an increase in electric field with corresponding increase in current density. The prepared thin films are used in the construction of P-N junction diode. The design and construction of the P-N junction diode has been elaborated here. The diode performance has been studied through the voltage Vs current characteristic graphs. The diode parameters of ideality factor (n) and barrier height (Φb) of n-FeTiO2/p-Si is calculated from the I-V measurements in darkness and under the illumination using J-V method. The value of ideality factor n for n-FeTiO2/p-Si diode is 6.88 in dark but under light, it increases to 7.51.