1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2020-12, Vol.32 (24), p.1531-1534
Hauptverfasser:	Bian, Zijun, Rae, Katherine J., McKenzie, Adam F., King, Ben C., Babazadeh, Nasser, Li, Guangrui, Orchard, Jonathan R., Gerrard, Neil D., Thoms, Stephen, MacLaren, Donald A., Taylor, Richard J. E., Childs, David, Hogg, Richard A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal surfaces Crystals Engineering Engineering, Electrical & Electronic Epitaxial layers III-V semiconductor materials Indium phosphide Indium phosphides Optical surface waves Optics Photonic crystal Photonic crystals Photonics Physical Sciences Physics Physics, Applied Room temperature Science & Technology semiconductor growth Semiconductor lasers Surface emitting lasers Technology
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Beschreibung
Zusammenfassung:	We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2020.3039059