Progress Report on Property, Preparation, and Application of Bi2O2Se
The study of 2D materials has been a significant and fascinating area, at least since the discovery of graphene. As one of the layered bismuth oxychalcogenides, bismuth oxyselenide (Bi2O2Se) has drawn a lot of attention recently. The study of Bi2O2Se was mainly focused on its thermoelectric performa...
Gespeichert in:
Veröffentlicht in: | Advanced functional materials 2020-12, Vol.30 (49), p.n/a |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The study of 2D materials has been a significant and fascinating area, at least since the discovery of graphene. As one of the layered bismuth oxychalcogenides, bismuth oxyselenide (Bi2O2Se) has drawn a lot of attention recently. The study of Bi2O2Se was mainly focused on its thermoelectric performance until its ultrathin 2D structure came to the fore. New physical properties of Bi2O2Se were discovered along with the successful synthesis of 2D Bi2O2Se structures. Few‐layer Bi2O2Se exhibits ultrahigh mobility, outstanding stability, tunable bandgaps, and excellent mechanical properties, showing remarkable performance in electronics and optoelectronics. In this report, an overview of recent advances in Bi2O2Se research is provided, including structure/property modifications, synthetic methods, and practical applications. Theoretical and experimental results on bulk/few‐layer Bi2O2Se are both discussed in this report. Finally, the challenges and outlook for Bi2O2Se are evaluated based on current progress.
As a new emerging 2D material, Bi2O2Se has shown remarkable properties. Herein, an overview of the research progress for Bi2O2Se is provided. The turnability of structure/property, preparation methods, and various applications of 2D Bi2O2Se are all discussed in this report. Bi2O2Se exhibits excellent properties for potential applications in many areas. |
---|---|
ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.202004480 |