Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices
This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combining silicon (Si), silicon carbide (SiC), and gallium...
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| Veröffentlicht in: | Electronics (Basel) 2020-11, Vol.9 (11), p.1982 |
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| container_issue | 11 |
| container_start_page | 1982 |
| container_title | Electronics (Basel) |
| container_volume | 9 |
| creator | Rodríguez-Benítez, Oscar Miguel Ponce-Silva, Mario Aquí-Tapia, Juan Antonio Claudio-Sánchez, Abraham Vela-Váldes, Luis Gerardo Lozoya-Ponce, Ricardo Eliu Cortés-García, Claudia |
| description | This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)-based power devices. The results show that unidirectional switches (metal–oxide–semiconductor field-effect transistors (MOSFETs) plus diode) present hard switching as a result of the diode preventing the MOSFET capacitance of being discharged. The effectiveness of the converter was verified with a 200-W prototype with an input voltage range of 0–30.3 V, an output voltage of 200 V, and a switching frequency of 200 kHz. The reduction losses by applying GaN versus Si and SiC technologies are 66.49% and 53.57%, respectively. Alternatively, by applying SiC versus Si devices the reduction loss is 27.84%. Finally, according to the results, 60% of losses were caused by the diodes on both switches. |
| doi_str_mv | 10.3390/electronics9111982 |
| format | Article |
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The results show that unidirectional switches (metal–oxide–semiconductor field-effect transistors (MOSFETs) plus diode) present hard switching as a result of the diode preventing the MOSFET capacitance of being discharged. The effectiveness of the converter was verified with a 200-W prototype with an input voltage range of 0–30.3 V, an output voltage of 200 V, and a switching frequency of 200 kHz. The reduction losses by applying GaN versus Si and SiC technologies are 66.49% and 53.57%, respectively. Alternatively, by applying SiC versus Si devices the reduction loss is 27.84%. 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| ispartof | Electronics (Basel), 2020-11, Vol.9 (11), p.1982 |
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| source | MDPI - Multidisciplinary Digital Publishing Institute; EZB-FREE-00999 freely available EZB journals |
| subjects | Bridges Business metrics Converters Direct current Efficiency Electric potential Energy Field effect transistors Gallium nitrides MOSFETs Photovoltaic cells Power semiconductor devices Silicon carbide Switches Switching Voltage |
| title | Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices |
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