Highly stable field emission from micron sized homogeneous β-Ga2O3 sheets grown using vapor phase transport route

Microstructures of gallium oxide with diverse morphologies are synthesized using vapor phase transport route. Structural and micro structural investigations using XRD, SEM and micro Raman technique confirm formation of single phase β-Ga2O3. Morphology and structural quality of the crystal growth is observed to improve with respect to growth temperature. Based on observations suitable growth mechanism is proposed to explain diverse morphologies governed by the growth temperatures. From Field Emission (FE) investigations, the structural defects associated with the crystal growth are claimed to affect the FE properties. Adequate field emission followed by steady current recorded over a long period of time for micron sized sheets of β-Ga2O3 (specimen synthesized at 1000 °C) looks favorable for various FE applications. The results are very promising looking at the possibilities to fabricate uniform, homogeneous layers of the active material, retaining excellent FE properties observed during various nano-forms of β-Ga2O3 otherwise. •Growth of gallium oxide microstructures using vapor phase transport route.•The β-Ga2O3 morphological changes are reported as a function of growth temperature.•Deformation and stress produced in crystals is observed to be a function of growth temperature.•Based on observations suitable growth mechanism is proposed herewith.•Adequate field emission followed by steady current is observed from micron sized sheets of β-Ga2O3.