The Influence of Temperature on the Lateral Photovoltaic Effect in the Fe3O4/SiO2/n-Si Structure

We report on the results of a study of the lateral photovoltaic effect in the Fe3O4/SiO2/n-Si(001) structure at temperatures of 300 and 122 K under continuous and pulsed illumination. It is found that when the temperature changes from 300 to 122 K, the LPE sensitivity decreases from 112 to 65 mV/mm. At pulsed illumination, an increase of rise time and a fall time is observed with decreasing temperature. From a consideration of the energy band diagrams and equivalent circuits of the Fe3O4/SiO2/n-Si structure, it is assumed that the detected temperature effects of LPE are due to the strong dependence of the magnetite film resistance on temperature.