Exploring Ferroelectric Switching in α‐In2Se3 for Neuromorphic Computing

Recently, 2D ferroelectrics have attracted extensive interest as a competitive platform for implementing future generation functional electronics, including digital memory and brain‐inspired computing circuits. Fulfilling their potential requires achieving the interplay between ferroelectricity and electronic characteristics on the device operation level, which is currently lacking since most studies are focused on the verification of ferroelectricity from different 2D materials. Here, by leveraging the ferroelectricity and semiconducting properties of α‐In2Se3, ferroelectric semiconductor field‐effect transistors (FeSFETs) are fabricated and their potential as artificial synapses is demonstrated. Multiple conductance states can be induced in α‐In2Se3‐based FeSFETs by controlling the out‐of‐plane polarization, which enables the device to faithfully mimic biosynaptic behaviors. In comparison with charge‐trapping‐based three‐terminal synaptic devices, the electronic synapses based on α‐In2Se3 have the advantages of good controllability, fast learning, and easy integration of gate dielectric, rendering them promising for neuromorphic computing. In addition, an abnormal resistive switching phenomenon in α‐In2Se3 is reported when operated in the in‐plane ferroelectric switching mode. The findings pave the way forward for α‐In2Se3‐based FeSFETs for developing neuromorphic devices in brain‐inspired intelligent systems. Electronic synapses for neuromorphic computing are demonstrated on an α‐In2Se3‐based ferroelectric semiconductor field‐effect transistor. The analog resistive switching behavior of α‐In2Se3 in the in‐plane configuration is also studied and its unusual switching mechanism is discussed.