3-level broadband THz antireflective structure on silicon surface

3-level broadband THz antireflective structure on silicon surface

The development and fabrication of broadband antireflection structures (ARS) for the THz frequency range are discussed. The three-level ARS was fabricated on a silicon substrate by RIE technology (Bosch-process). Results of realized ARS spectral investigation are presented.

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Bibliographische Detailangaben
Hauptverfasser: Tzibizov, I. A., Kropotov, G. I., Pavelyev, V. S., Tukmakov, K. N., Reshetnikov, A. S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Broadband
Frequency ranges
Silicon substrates
Terahertz frequencies
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Beschreibung
Zusammenfassung:The development and fabrication of broadband antireflection structures (ARS) for the THz frequency range are discussed. The three-level ARS was fabricated on a silicon substrate by RIE technology (Bosch-process). Results of realized ARS spectral investigation are presented.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0027011