Structural characterization and optical parameter of silicon phthalocyanine dichloride thin films dependence with gamma ray radiation

Silicon phthalocyanine dichloride (SiPcCl2) thin films was prepared using thermal evaporation technique. The optical and structural properties of the films were examined before and after gamma irradiation process. X-ray diffraction (XRD), Fourier-transform infrared (FTIR) and Scanning electron microscope (SEM) investigated the structure of SiPcCl2. Moreover, optical properties were studied before and after irradiation. The optical band gap decreased from 2.44 eV to 2.09 eV after irradiation with 5 KGy. The dispersion parameters like the infinity ε∞, lattice εL dielectric constants, dispersion energy Ed, the ratio of carrier concentration to the effective mass N/m*, oscillator energy Eo were evaluated. Furthermore, the relation of volume energy loss functions VELF, the surface energy loss functions SELF, the real part ε1 and imaginary part ε2 of the dielectric constant with photon energy, hυ was analyzed. •SiPcCl2 thin flms were an amorphous form for as-deposited and irradiated films.•Indirect allowed transition is observed in SiPcCl2 thin films.•The optical energy gap is 2.44 eV and it decreases to 2.09 by irradiation effect.•The effect of gamma rays on optical parameters is investigated.