Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film Transistors
To describe both Arrhenius and non-Arrhenius temperature-dependent drain currents for the organic thin-film transistors, the effective trapped carrier concentration expression is presented. Based on the expression, following the Shur and Hack's trap limited carrier conduction theory, the analyt...
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| Veröffentlicht in: | IEEE transactions on electron devices 2020-11, Vol.67 (11), p.5091-5096 |
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| container_issue | 11 |
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| container_title | IEEE transactions on electron devices |
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| creator | He, Hongyu Xiong, Chao Yin, Junli Wang, Xinlin Lin, Xinnan Zhang, Shengdong |
| description | To describe both Arrhenius and non-Arrhenius temperature-dependent drain currents for the organic thin-film transistors, the effective trapped carrier concentration expression is presented. Based on the expression, following the Shur and Hack's trap limited carrier conduction theory, the analytical drain current model is developed. The temperature-dependent trap states' density is presented to explain the origin of the effective trapped carrier concentration expression. |
| doi_str_mv | 10.1109/TED.2020.3025269 |
| format | Article |
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Based on the expression, following the Shur and Hack's trap limited carrier conduction theory, the analytical drain current model is developed. 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Based on the expression, following the Shur and Hack's trap limited carrier conduction theory, the analytical drain current model is developed. The temperature-dependent trap states' density is presented to explain the origin of the effective trapped carrier concentration expression.</description><subject>Analytical models</subject><subject>Carrier concentration</subject><subject>Carrier density</subject><subject>drain current model</subject><subject>Electric potential</subject><subject>Electron traps</subject><subject>Numerical models</subject><subject>Semiconductor devices</subject><subject>temperature characteristics</subject><subject>Temperature dependence</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>Transistors</subject><subject>trap states</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkEtPwzAQhC0EEuVxR-JiiXOK7dhJfCx9AFKhl3COnGTTumrtsE4O_HsStYLTalYzu5qPkAfOppwz_ZwvF1PBBJvGTCiR6Asy4UqlkU5kckkmjPEs0nEWX5ObEPaDTKQUE4IfvoaDdVvqG_riux2dIe7A2T5Q42r66V30v8nh2AKarkeIFtCCq8F1dIHGOjrvEUfVeKQb3BpnK5rvrItW9nCkORoXbOg8hjty1ZhDgPvzvCVfq2U-f4vWm9f3-WwdVULzLoKKCSlBQ5olvMp42ZS1VByg4SWUdapKleoqESk3MZcGqqGpagSHLM4yJVR8S55Od1v03z2Ertj7Ht3wshBSSZlonY4udnJV6ENAaIoW7dHgT8FZMZItBrLFSLY4kx0ij6eIBYA_uxYsUbGMfwF1T3U4</recordid><startdate>20201101</startdate><enddate>20201101</enddate><creator>He, Hongyu</creator><creator>Xiong, Chao</creator><creator>Yin, Junli</creator><creator>Wang, Xinlin</creator><creator>Lin, Xinnan</creator><creator>Zhang, Shengdong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Based on the expression, following the Shur and Hack's trap limited carrier conduction theory, the analytical drain current model is developed. The temperature-dependent trap states' density is presented to explain the origin of the effective trapped carrier concentration expression.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2020.3025269</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-1815-8661</orcidid><orcidid>https://orcid.org/0000-0003-0721-9067</orcidid></addata></record> |
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| subjects | Analytical models Carrier concentration Carrier density drain current model Electric potential Electron traps Numerical models Semiconductor devices temperature characteristics Temperature dependence Thin film transistors thin-film transistor (TFT) Transistors trap states |
| title | Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film Transistors |
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