Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film Transistors

Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film Transistors

To describe both Arrhenius and non-Arrhenius temperature-dependent drain currents for the organic thin-film transistors, the effective trapped carrier concentration expression is presented. Based on the expression, following the Shur and Hack's trap limited carrier conduction theory, the analyt...

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Veröffentlicht in:IEEE transactions on electron devices 2020-11, Vol.67 (11), p.5091-5096
Hauptverfasser: He, Hongyu, Xiong, Chao, Yin, Junli, Wang, Xinlin, Lin, Xinnan, Zhang, Shengdong
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Carrier concentration
Carrier density
drain current model
Electric potential
Electron traps
Numerical models
Semiconductor devices
temperature characteristics
Temperature dependence
Thin film transistors
thin-film transistor (TFT)
Transistors
trap states
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Zusammenfassung:To describe both Arrhenius and non-Arrhenius temperature-dependent drain currents for the organic thin-film transistors, the effective trapped carrier concentration expression is presented. Based on the expression, following the Shur and Hack's trap limited carrier conduction theory, the analytical drain current model is developed. The temperature-dependent trap states' density is presented to explain the origin of the effective trapped carrier concentration expression.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3025269