Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

In this Letter, we present reset-voltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2020-10, Vol.117 (15)
Hauptverfasser: Kim, Tae-Hyeon, Nili, Hussein, Kim, Min-Hwi, Min, Kyung Kyu, Park, Byung-Gook, Kim, Hyungjin
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Applied physics
Electric potential
High resistance
Memory devices
Memristors
Switching
Titanium oxides
Tuning
Voltage
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this Letter, we present reset-voltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed regarding cycle-to-cycle as well as device-to-device variations. We believe that these results can be applied to operate TiOx/Al2O3-based memristors in areas requiring highly accurate tuning characteristics.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0021626