Relaxation of the Excited States of Arsenic in Strained Germanium
The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The states are excited from the 1 s (Γ 1 ) ground state. T...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-10, Vol.54 (10), p.1347-1351 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The relaxation times of the lower
p
states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The states are excited from the 1
s
(Γ
1
) ground state. The experimentally measured decay times of the 2
p
0
, 3
p
0
, and 2
p
±
states are 1.3, no more than 0.2, and 0.4 ns, respectively. It is shown that the relatively high relaxation rate of the 2
p
±
state is defined by the interaction with intravalley TA photons. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782620100188 |