Relaxation of the Excited States of Arsenic in Strained Germanium

The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The states are excited from the 1 s (Γ 1 ) ground state. T...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-10, Vol.54 (10), p.1347-1351
Hauptverfasser: Kovalevsky, K. A., Choporova, Yu. Yu, Zhukavin, R. Kh, Abrosimov, N. V., Pavlov, S. G., Hübers, H.-W., Tsyplenkov, V. V., Kukotenko, V. D., Knyazev, B. A., Shastin, V. N.
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Sprache:eng
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Zusammenfassung:The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The states are excited from the 1 s (Γ 1 ) ground state. The experimentally measured decay times of the 2 p 0 , 3 p 0 , and 2 p ± states are 1.3, no more than 0.2, and 0.4 ns, respectively. It is shown that the relatively high relaxation rate of the 2 p ± state is defined by the interaction with intravalley TA photons.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620100188