Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase tran...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2020-10, Vol.54 (10), p.1325-1331
Hauptverfasser:	Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Matyushenko, E. V., Neizvestny, I. G., Sidorov, G. Yu, Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Epov, V.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	2020 Composition Curie temperature Epitaxial growth Ferroelectric materials Ferroelectricity Insulators Magnetic Materials Magnetism March 10–13 MIS (semiconductors) Molecular beam epitaxy Nizhny Novgorod Phase transitions Physics Physics and Astronomy Radiation, Background Semiconductors Xxiv International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:	The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase transition with a Curie temperature in the range of about T ≈ 15–20 K.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782620100164