Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor

Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor

The structure and optical properties of a chalcogenide glassy As–Ge–Te semiconductor film are studied by X-ray diffraction analysis, Raman spectroscopy, and optical transmission and density measurement. The main structural elements and chemical bonds forming an amorphous matrix as well as the optica...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-10, Vol.54 (10), p.1241-1246
Hauptverfasser: Isayev, A. I., Mammadova, H. I., Mekhtiyeva, S. I., Alekberov, R. I.
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Bonds
Chalcogenides
Chemical bonds
Composite Semiconductors
Density measurement
Equipment and supplies
Fiber optics
Magnetic Materials
Magnetism
Microcrystalline
Nanocrystalline
Optical properties
Order parameters
Physics
Physics and Astronomy
Porous
Raman spectroscopy
Semiconductors
Short range order
Structural members
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Beschreibung
Zusammenfassung:The structure and optical properties of a chalcogenide glassy As–Ge–Te semiconductor film are studied by X-ray diffraction analysis, Raman spectroscopy, and optical transmission and density measurement. The main structural elements and chemical bonds forming an amorphous matrix as well as the optical width of the band gap are determined. The results are explained taking into account the main principles of chemical ordering and short-range order parameters in the atomic arrangement.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620100140