Quasi-Stationary Processes of the Dielectric Relaxation in Polycrystalline Thin PZT Films

Quasi-Stationary Processes of the Dielectric Relaxation in Polycrystalline Thin PZT Films

The relaxation processes in polycrystalline PZT films formed on silicon substrates have been studied during a quasi-static change in an external electric field. The dielectric relaxation is shown to be characterized at least by three relaxation times depending on the direction of the self-polarizati...

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Veröffentlicht in:Physics of the solid state 2020-10, Vol.62 (10), p.1868-1872
Hauptverfasser: Ivanov, V. V., Golubeva, E. N., Sergeeva, O. N., Nekrasova, G. M., Pronin, I. P., Kiselev, D. A.
Format: Artikel
Sprache:eng
Schlagworte:
Dielectric relaxation
Electric fields
Ferroelectrics
Lead zirconate titanates
Physics
Physics and Astronomy
Polarization
Polycrystals
Silicon substrates
Solid State Physics
Stationary processes
Thin films
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Zusammenfassung:The relaxation processes in polycrystalline PZT films formed on silicon substrates have been studied during a quasi-static change in an external electric field. The dielectric relaxation is shown to be characterized at least by three relaxation times depending on the direction of the self-polarization in the film, the value of the polarizing field, and also the PZT film annealing temperature.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783420100133