Artificial Indium‐Tin‐Oxide Synaptic Transistor by Inkjet Printing Using Solution‐Processed ZrOx Gate Dielectric

Inkjet‐printed indium‐tin‐oxide (ITO) synaptic thin‐film transistors (TFTs) using solution‐processed high‐k zirconium oxide (ZrOx) gate dielectric layer are reported. The effect of ZrOx annealing temperature from 300 to 500 °C on the TFT performance is investigated. The optimized ZrOx gate dielectric layer of the ITO TFT can mimic biological synaptic response for the realization of intelligent computers and artificial bionic brain. The strong synaptic behavior of the ITO TFT exhibiting the on/off current ratio of ≈106 can be obtained at the ZrOx annealing temperature of 300 °C. The amount of hydroxyl (OH) groups in the dielectric film can be a crucial factor for the formation of an electric double layer (EDL) on the top region of the gate dielectric. The device exhibits the excitatory post‐synaptic current (EPSC), inhibitory postsynaptic current (IPSC), and paired‐pulse facilitation (PPF). Therefore, the inkjet‐printed ITO TFT using printed ZrOx gate dielectric can be used for low‐cost synaptic TFTs. Synaptic indium‐tin‐oxide (ITO) thin‐film‐transistor (TFT) with solution‐processed ZrOx gate dielectric is successfully performed. A long‐term‐plasticity (LTP) result with an amplitude of 3 V, and a pulse width of 120 ms (interval 30 ms) are applied on the gate.