Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation and thermal annealing are reported on. A complete annihilation of implantation-induced extended defects (dislocation loops), quasi-point defects and related donor centers was observ...

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Veröffentlicht in:	Surface & coatings technology 2020-07, Vol.393, p.125721, Article 125721
Hauptverfasser:	Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Activation Annealing Arsenic Arsenic ions Defect annealing Defects Dislocation loops Hall effect HgCdTe Ion implantation Mercury cadmium tellurides Point defects Properties (attributes) Surface modification Surface properties
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