Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation and thermal annealing are reported on. A complete annihilation of implantation-induced extended defects (dislocation loops), quasi-point defects and related donor centers was observed as a result of a two-stage arsenic activation annealing. A high degree of activation of implanted arsenic was achieved with the annealing. In some cases, the annealing was found to lead to the modification of the properties of the ‘base’ layers not affected by implantation due to activation of uncontrolled acceptor defects and resulting changes in the degree of electrical compensation. •Modification of the surface of HgCdTe films with arsenic implantation and annealing was studied.•Annealing was shown to annihilate structural defects induced by implantation.•High degree of activation of arsenic as a result of post-implantation annealing was achieved.•Activation of residual acceptor impurities by post-implantation annealing was discovered.