Thermoelectric Si1−xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators

This study presents the material design of Si1−xGex epitaxial films/Si for thin film thermoelectric generators (TFTEGs) by investigating their thermoelectric properties. The thermoelectric films composed of group-IV elements are advantageous due to their compatibility with the Si process. We fabrica...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2020-10, Vol.117 (14)
Hauptverfasser:	Taniguchi, Tatsuhiko, Ishibe, Takafumi, Hosoda, Ryoya, Wagatsuma, Youya, Alam, Md. Mahfuz, Sawano, Kentarou, Uenuma, Mutsunori, Uraoka, Yukiharu, Yamashita, Yuichiro, Mori, Nobuya, Nakamura, Yoshiaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon Applied physics Epitaxial growth Germanium Heat conductivity Heat transfer Maximum power Power factor Room temperature Silicon germanides Temperature gradients Thermal conductivity Thermoelectric generators Thermoelectricity Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!