Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN

Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN

A novel ohmic contact formation mechanism is revealed for the annealed Ta 0.83 Al 0.17 /Au stacks on non-recessed i-AlGaN/GaN. It is demonstrated that the contact metal alloy mainly composed by Au penetrates the AlGaN layer without apparent Ta-related solid phase reactions, establishing a spike-free...

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Veröffentlicht in:IEEE electron device letters 2020-10, Vol.41 (10), p.1484-1487
Hauptverfasser: Fan, Meng-Ya, Jiang, Yang, Yang, Gai-Ying, Jiang, Yu-Long, Yu, Hong-Yu
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Aluminum gallium nitrides
Annealing
Atomic layer deposition
Contact resistance
Electron gas
Gallium nitrides
Gold
HEMTs
Low resistance
MODFETs
non-recessed i-AlGaN/GaN
Ohmic contact
penetration
Penetration resistance
Solid phases
Spikes
TaAl alloy
Tantalum
Wide band gap semiconductors
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Zusammenfassung:A novel ohmic contact formation mechanism is revealed for the annealed Ta 0.83 Al 0.17 /Au stacks on non-recessed i-AlGaN/GaN. It is demonstrated that the contact metal alloy mainly composed by Au penetrates the AlGaN layer without apparent Ta-related solid phase reactions, establishing a spike-free contact to the 2D electron gas. A low contact resistivity of 0.14\Omega ~\cdot mm (4.24E- 7~\Omega \cdot cm 2 ) is then obtained after 900 °C/60s annealing.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3020232