P‐36: Highly Reliable a‐IGZO TFT Gate Driver Circuit to Prevent Leakage Path in Depletion Mode Operation
This paper proposes new gate driver circuit to prevent VOUT ripple voltage by boosting‐down effect of pull‐up unit. Using only one pull‐down TFT with 50% turn‐on duty ratio, the proposed circuit can obtain high reliability for continuous bias stress and fully cut‐off ripple voltage by negative VGS f...
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.1486-1489 |
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| container_title | SID International Symposium Digest of technical papers |
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| creator | Lee, Jungwoo Oh, Jongsu Jung, Eun Kyo Park, KeeChan Lee, Soo-Yeon Kim, Yong-Sang |
| description | This paper proposes new gate driver circuit to prevent VOUT ripple voltage by boosting‐down effect of pull‐up unit. Using only one pull‐down TFT with 50% turn‐on duty ratio, the proposed circuit can obtain high reliability for continuous bias stress and fully cut‐off ripple voltage by negative VGS for pull‐up TFT. |
| doi_str_mv | 10.1002/sdtp.14168 |
| format | Article |
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| identifier | ISSN: 0097-966X |
| ispartof | SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.1486-1489 |
| issn | 0097-966X 2168-0159 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Circuit reliability Depletion Depletion Mode Driver circuits Duty Ratio Electric potential Gate Driver Circuit Gates (circuits) Indium gallium zinc oxide Leakage Current Oxide TFT Reliability Ripples Voltage |
| title | P‐36: Highly Reliable a‐IGZO TFT Gate Driver Circuit to Prevent Leakage Path in Depletion Mode Operation |
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