P‐19: A Study of Oxide TFT Vth Shift Behavior by Characterizing with Nano‐scale SIMS

P‐19: A Study of Oxide TFT Vth Shift Behavior by Characterizing with Nano‐scale SIMS

In the present work we developed advanced nano‐scale SIMS technology and investigated oxide TFTs Vth shift behavior. Not only vertical but also lateral resolutions were improved by modification of geometry factors and optimized the impact energy. By applying developed method, we found that a halogen...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.1379-1382
Hauptverfasser: Park, Jung Hwa, Han, Jae Bum, Jeong, Soo Im, Park, Young Gil, Ahn, Nari
Format: Artikel
Sprache:eng
Schlagworte:
Free electrons
halogen element
lateral
Nano-scale SIMS
post-fabrication annealing
resolution
vertical
Vth negative shift
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Zusammenfassung:In the present work we developed advanced nano‐scale SIMS technology and investigated oxide TFTs Vth shift behavior. Not only vertical but also lateral resolutions were improved by modification of geometry factors and optimized the impact energy. By applying developed method, we found that a halogen element was directly modulated electrical property of oxide TFTs by generating free electrons. Both the patterning and post‐fabrication annealing processes had to be precisely controlled.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.14142