58‐2: Distinguished Paper: Active Matrix QD‐LED with Top Emission Structure by UV Lithography for RGB Patterning

We have developed full colour top emitting quantum dot light emitting diode (QD‐LED) display driven by a 176 ppi active matrix of metal oxide thin film transistors. Red, green and blue (RGB) QD‐LED sub pixel emission layers are patterned by our original UV photolithography process and materials. We...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.862-865
Hauptverfasser: Nakanishi, Yohei, Takeshita, Tomohiro, Qu, Yang, Imabayashi, Hiroki, Okamoto, Shota, Utsumi, Hisayuki, Kanehiro, Masayuki, Angioni, Enrico, Boardman, Edward A., Hamilton, Iain, Zampetti, Andrea, Berryman-Bousquet, Valerie, Smeeton, Tim M., Ishida, Takeshi
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container_issue 1
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container_title SID International Symposium Digest of technical papers
container_volume 51
creator Nakanishi, Yohei
Takeshita, Tomohiro
Qu, Yang
Imabayashi, Hiroki
Okamoto, Shota
Utsumi, Hisayuki
Kanehiro, Masayuki
Angioni, Enrico
Boardman, Edward A.
Hamilton, Iain
Zampetti, Andrea
Berryman-Bousquet, Valerie
Smeeton, Tim M.
Ishida, Takeshi
description We have developed full colour top emitting quantum dot light emitting diode (QD‐LED) display driven by a 176 ppi active matrix of metal oxide thin film transistors. Red, green and blue (RGB) QD‐LED sub pixel emission layers are patterned by our original UV photolithography process and materials. We also demonstrate the potential to achieve high resolution such as 528 ppi using this process.
doi_str_mv 10.1002/sdtp.14006
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subjects active matrix
Emission
Light emitting diodes
Metal oxides
Photolithography
QD-LED
Quantum dot light emitting diode displays
Quantum dots
Semiconductor devices
Thin film transistors
top emission
title 58‐2: Distinguished Paper: Active Matrix QD‐LED with Top Emission Structure by UV Lithography for RGB Patterning
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