58‐2: Distinguished Paper: Active Matrix QD‐LED with Top Emission Structure by UV Lithography for RGB Patterning

58‐2: Distinguished Paper: Active Matrix QD‐LED with Top Emission Structure by UV Lithography for RGB Patterning

We have developed full colour top emitting quantum dot light emitting diode (QD‐LED) display driven by a 176 ppi active matrix of metal oxide thin film transistors. Red, green and blue (RGB) QD‐LED sub pixel emission layers are patterned by our original UV photolithography process and materials. We...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.862-865
Hauptverfasser: Nakanishi, Yohei, Takeshita, Tomohiro, Qu, Yang, Imabayashi, Hiroki, Okamoto, Shota, Utsumi, Hisayuki, Kanehiro, Masayuki, Angioni, Enrico, Boardman, Edward A., Hamilton, Iain, Zampetti, Andrea, Berryman-Bousquet, Valerie, Smeeton, Tim M., Ishida, Takeshi
Format: Artikel
Sprache:eng
Schlagworte:
active matrix
Emission
Light emitting diodes
Metal oxides
Photolithography
QD-LED
Quantum dot light emitting diode displays
Quantum dots
Semiconductor devices
Thin film transistors
top emission
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have developed full colour top emitting quantum dot light emitting diode (QD‐LED) display driven by a 176 ppi active matrix of metal oxide thin film transistors. Red, green and blue (RGB) QD‐LED sub pixel emission layers are patterned by our original UV photolithography process and materials. We also demonstrate the potential to achieve high resolution such as 528 ppi using this process.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.14006