30‐5: Late‐News Paper: Glass‐based High brightness AMLED using Dual Gate Coplanar a‐IGZO TFT

In this study, we report the high‐brightness 1.53 inch 130 PPI active‐matrix light‐emitting diode display (AMLED). Dual gate coplanar amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin film transistor (TFT) is applied for the high brightness micro LED display. The micro LEDs optimized for the a‐IGZO TFT backplane are fabricated, and the low‐temperature eutectic bonding is applied to prevent thermal bonding damage. Finally, the glass based AMLED over ~ 10,000 cd/m2 is demonstrated, using the dual gate coplanar a‐IGZO TFT.