Method for Analyzing the Temperature and Pressure Dependence of the Growth of an Oxide Film in the Thermal Oxidation of Si and SiC

A method for analyzing the temperature and pressure dependence of the growth of an oxide film in the thermal oxidation of Si and SiC is devised. By using it, the experimental data of the oxide films thermally grown on Si(100) and Si(111) are analyzed to find that the barrier for the diffusion of O2 molecules in the transition region generated on Si(100) by thermal oxidation is larger than that on Si(111) by 0.20 eV. The experimental data on the oxide films thermally grown on Si(100) using ozone gas are also analyzed.