Ultrafast wafer-scale assembly of uniform and highly dense semiconducting carbon nanotube films for optoelectronics

We report an innovative method for the fast preparation of wafer-scale uniform single-wall carbon nanotubes (SWCNT) films with controllable density by NaHCO3 tuning the interaction between amine-functionalized substrates and surfactant-dispersing SWCNTs in aqueous solution. With this technique, a 4-...

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Veröffentlicht in:Carbon (New York) 2020-08, Vol.163, p.370-378
Hauptverfasser: Su, Wei, Yang, Dehua, Cui, Jiaming, Wang, Futian, Wei, Xiaojun, Zhou, Weiya, Kataura, Hiromichi, Xie, Sishen, Liu, Huaping
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Sprache:eng
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Zusammenfassung:We report an innovative method for the fast preparation of wafer-scale uniform single-wall carbon nanotubes (SWCNT) films with controllable density by NaHCO3 tuning the interaction between amine-functionalized substrates and surfactant-dispersing SWCNTs in aqueous solution. With this technique, a 4-inch SWCNT film with a linear density of ∼30 tubes/μm can be achieved in 1 s, and over 60 tubes/μm within 30 s using a high-concentration SWCNT solution. The SWCNT density changes by less than 8% over a 4-inch area. The electrical uniformity of the as-prepared wafer-scale single-chirality SWCNT film was demonstrated to be within 10.8% for subthreshold swing and 12% for carrier mobility and 13.5% for their on-current, which is the most uniform SWCNT films reported so far fabricated from the surfactant-dispersed SWCNT solution. Further, the photodetectors made by the uniform semiconducting SWCNT films exhibit excellent cascading ability, which linearly amplify the output photovoltages and could produce a photovoltage responsivity of 2.5 × 106 V/W. When three-stage cascading photodetectors are used as optical gate to establish an integrated photoelectric system, a 20-mW/cm2 light illumination produces the current responsivity of 147.3 A/W under a source/drain voltage of −0.1 V. Our present technique lays an important foundation for their applications in integrated circuits. [Display omitted]
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2020.03.032