The crystallization and growth of SiC nanowires converted from self-assembly Si nanorods on carbon fabric and their electrochemical capacitance property

Designing rationally and controlling precisely the hierarchical nanomaterials are of crucial significance for achieving high-performance nanodevices. Here, substantial SiC nanowires (NWs) with various morphologies and dimensions on carbon fabric were synthesized by regulating the ratio of Si and SiO2 via a simple catalyst-free CVD approach. A wealth of NWs with mean diameter of ∼25 nm and narrow distribution are obtained. The crystallization and growth of SiC NWs converted from self-assembly nanorods on carbon fabric are investigated in detail. Structural evolution experiences amorphous structure, partial crystal, crystal with irregular defects, as well as near-periodical twins. Crystal structure converted from irregular defects to near-periodical twins is ascribed to the release of elastic energy via vapor-solid (VS) mechanism. Electrochemical results display a high areal capacitance of 46.7 mF/cm2 at a scan rate of 0.1 V/s, an almost ideal capacitive behavior as well as robust stability. This areal capacitance is much higher than that of state-of-the art carbon-based supercapacitor electrodes. The electrochemical capacitance property demonstrates SiC NWs on carbon fabric as promising candidates for high-performance supercapacitors. •SiC nanowires with 25 nm in diameter and a narrow distribution were obtained.•Crystal structural evolution of SiC nanowires converted from Si nanorods was observed.•A crystallization mechanism of SiC nanowires was proposed.•SiC nanowires are of high areal capacitance, ideal capacitive behavior and robust stability.