Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices

Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices

The incorporation of a TaOy layer in a HfOx/TaOy/HfOx resistive switching memory stack results in low-power (~nW in pulsing mode) and forming-free operation. With this material configuration, we derive a stable memory window (~102), good cycling variability (σ/μ 

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronic engineering 2020-05, Vol.229, p.111358, Article 111358
Hauptverfasser: Sakellaropoulos, Dionisis, Bousoulas, Panagiotis, Nikas, Georgios, Arvanitis, Christos, Bagakis, Emmanouil, Tsoukalas, Dimitris
Format: Artikel
Sprache:eng
Schlagworte:
Conducting filaments
Energy consumption
Neuromorphic computing
Oxygen
Oxygen content
Oxygen vacancies
Plastic properties
Power management
RRAM
Spike-timing
Superplasticity
Switching
Synaptic plasticity
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The incorporation of a TaOy layer in a HfOx/TaOy/HfOx resistive switching memory stack results in low-power (~nW in pulsing mode) and forming-free operation. With this material configuration, we derive a stable memory window (~102), good cycling variability (σ/μ 
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2020.111358