Study of electrical attributes of molybdenum ditelluride (MoTe2) FET using experimental and theoretical evidences

Two-dimensional (2D) semiconducting TMDCs materials have recently gained much attention and are considered as promising materials with a high surface-to-volume ratio for electronics. The performance of devices greatly affected by environmental factors. For attaining the high performance of the device, environmental issues must be addressed. Here, we have demonstrated an n-type doping effect from DUV + N2 treatment to overcome the environmental influences and to enhance the performance of MoTe2 FET. After the n-type doping effect from DUV + N2 treatment mobility, charge carrier density, and ION/IOFF ratio increased up to 62.4 cm2/Vs, 3 × 1012 cm−2 and 107 respectively. The negative shift of threshold voltage (Vth) and Raman peaks towards the lower wavenumber confirms the n-type doping effect in the MoTe2 FET from DUV + N2 treatment. By using this method, we can change and control the polarity of the MoTe2 FET by changing the doping time. First-principles calculation on the study of structural, electronic and optical properties have been performed using the density functional theory (DFT) where full-potential linearized augmented plane wave (FP-LAPW) was used a basis set with generalized gradient approximation plus Hubbard potential (GGA + U) respectively. Furthermore, investigation of electron charge density is done to analyze the mechanism of structural stability of nitrogen doped MoTe2. DUV + N2 treatment is an effective way to improve the performance of MoTe2 FET. [Display omitted]