In-situ heavily p-type doping of over1020 cm−3 in semiconducting BaSi2 thin films for solarcells applications
B-doped p-BaSi2 layer growth by molecular beam epitaxy and theinfluence of rapid thermalannealing(RTA) onholeconcentrations were presented. The hole concentration wascontrolled in the range between 1017 and 1020 cm−3 atroom temperature by changing the temperature of the B Knudsen cell crucible. The...
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| Veröffentlicht in: | Applied physics letters 2013-03, Vol.102 (11) |
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| container_title | Applied physics letters |
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| creator | Ajmal, Khan M Hara, K O Du W Baba, M Nakamura, K Suzuno, M Toko, K |
| description | B-doped p-BaSi2 layer growth by molecular beam epitaxy and theinfluence of rapid thermalannealing(RTA) onholeconcentrations were presented. The hole concentration wascontrolled in the range between 1017 and 1020 cm−3 atroom temperature by changing the temperature of the B Knudsen cell crucible. The acceptorlevel of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding1 × 1020 cm−3 were achieved via dopant activation usingRTA at 800 °C inAr. The activation efficiency was increased up to 10%. |
| doi_str_mv | 10.1063/1.4796142 |
| format | Article |
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The hole concentration wascontrolled in the range between 1017 and 1020 cm−3 atroom temperature by changing the temperature of the B Knudsen cell crucible. The acceptorlevel of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding1 × 1020 cm−3 were achieved via dopant activation usingRTA at 800 °C inAr. 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The hole concentration wascontrolled in the range between 1017 and 1020 cm−3 atroom temperature by changing the temperature of the B Knudsen cell crucible. The acceptorlevel of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding1 × 1020 cm−3 were achieved via dopant activation usingRTA at 800 °C inAr. The activation efficiency was increased up to 10%.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4796142</doi></addata></record> |
| fulltext | fulltext |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Activation Applied physics Barium compounds Crucibles Disilicides Epitaxial growth Knudsen gages Molecular beam epitaxy Thin films |
| title | In-situ heavily p-type doping of over1020 cm−3 in semiconducting BaSi2 thin films for solarcells applications |
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