In-situ heavily p-type doping of over1020 cm−3 in semiconducting BaSi2 thin films for solarcells applications

B-doped p-BaSi2 layer growth by molecular beam epitaxy and theinfluence of rapid thermalannealing(RTA) onholeconcentrations were presented. The hole concentration wascontrolled in the range between 1017 and 1020 cm−3 atroom temperature by changing the temperature of the B Knudsen cell crucible. The acceptorlevel of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding1 × 1020 cm−3 were achieved via dopant activation usingRTA at 800 °C inAr. The activation efficiency was increased up to 10%.