Depth-dependent ferromagnetic spin structure and asymmetric magnetization reversal in exchange-biased Fe/FeMn bilayers

•Clear-cut evidence of the formation of a partial domain wall in the ferromagnet during reversal.•Depth-dependent spin rotation investigated using in-field 57Fe CEMS angular hysteresis loops.•Observation of asymmetric magnetisation reversal by comparing VSM and CEMS hysteresis loops.•Relevant for th...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2020-06, Vol.504, p.166657, Article 166657
Hauptverfasser: Fernandez-Outon, L.E., Araújo Filho, M.S., Ardisson, J.D., Macedo, W.A.A.
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Sprache:eng
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Zusammenfassung:•Clear-cut evidence of the formation of a partial domain wall in the ferromagnet during reversal.•Depth-dependent spin rotation investigated using in-field 57Fe CEMS angular hysteresis loops.•Observation of asymmetric magnetisation reversal by comparing VSM and CEMS hysteresis loops.•Relevant for the development of quantitative models for exchange-biased spintronic devices. Depth-dependent spin rotation of the Fe spins upon magnetisation reversal of the ferromagnetic layer in polycrystalline Fe/FeMn exchange-biased bilayers was investigated by using 57Fe probe layers and angular hysteresis loops constructed from in-field 57Fe conversion electron Mössbauer spectroscopy (CEMS) measurements and magnetometry. Our results provide evidence for the formation of an exchange-spring-like domain wall structure inside the ferromagnetic Fe layer during magnetisation reversal along the forward branch of the hysteresis loop (H values varying from positive to negative), and coherent reversal along the recoil branch (H varying from negative to positive). This result implies asymmetric magnetisation reversal for each branch of the hysteresis loop, as indicated by depth-resolved CEMS and vibrating sample magnetometry. These results are relevant for the development of more precise quantitative models for exchange bias in polycrystalline metallic systems with Mn-based antiferromagnets such as those used in spintronic applications.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2020.166657